From the charge neutrality,by analyzing the relation of impurity density and minority carrier con-centration under different temperature,calculating the rate of unionized dopant,ionization of dopant in single-doped semiconductor is determined and the formulae of carrier concentrations are deduced.
利用電中性條件,通過分析不同溫度下雜質濃度和少子濃度的相對關系以及雜質未電離比率,討論了如何判定具有單一雜質的半導體中雜質的電離狀態并計算相應狀態下的載流子濃度;通過判定少子濃度是遠低于還是遠高于雜質濃度,或是與雜質濃度相當,可有效區分飽和電離區、過渡區以及本征電離區并得到有效的載流子濃度計算公式;通過計算未電離雜質的比率可有效判定雜質半導體是處于低溫弱電離區、中間電離區或飽和電離區,并得到其載流子濃度計算公式;最后通過實例說明判定方法的應用并計算相應的載流子濃度。
Decision of Ionization of Dopant in Single-doped Semiconductor
單一雜質半導體中雜質電離狀態判定
"Intrinsic semiconductors have a high degree of chemical purity, But their conductivity is poor. Extrinsic semiconductors contain impurities that produce much greater conductivity."
本質半導體的化學純度很高,而電導率很低;雜質半導體含有雜質,造成更高的電導率。
When the electrical characteristics are dictated by impurity atoms, the semiconductor is said to be extrinsic semiconductors.
如果半導體的電學性質歸因于其中的雜質原子，那么它將被稱為雜質半導體。
Formulae of Fermi Energy in Poly-doped Semiconductor and Algorithm Computation
混合雜質半導體費米能級公式及數值計算
"Such materials can be converted into the technologically more important extrinsic semiconductors by addition of small amounts of impurities, a process called doping."
這些材料在技術上可以透過加入少量的雜質(這個過程稱作摻質)而轉化成更重要的雜質半導體。
Semiconductors containing such impurities are called p-type semiconductors.
含有這類雜質的半導體叫做P型半導體。
Synthesis, Doping and Optical Properties of ZnO Semiconductor Nanocrystallines;
半導體納米ZnO的制備、摻雜及光學性質
When a donor or an acceptor impurity is added to a semiconductor, we say that the material has been "doped".
當半導體中加入了施主感受主雜質，我們就說該物質“摻雜”了。
Theoretical Studies of Quantum Dots and Effect of Magnetic Fields and an Impurity;
半導體量子點的理論研究及磁場與雜質的效應
Hydrostatic Pressure Effect on Donor and Exciton in Semiconductors Quantum Wells;
半導體量子阱中的雜質態和激子的壓力效應
Exciton and Impurity State in Semiconductor Quantum Wells in an Electric Field;
外電場下半導體量子阱中的激子和雜質態
Effect on optical properties of semiconductor films by Fe doping;
金屬摻雜對半導體薄膜光學性質的影響
Structural Stabilities and Electronic Properties of Several Dopants and Surfaces of Semiconductors
半導體摻雜和表面若干穩定結構及其性質
Impurity States in Wurtzite Nitride Semiconductor Ellipsoidal Quantum Dots
纖鋅礦氮化物半導體橢球形量子點雜質態
Transistors consist of layers of different semiconductors produced by addition of impurities (such as arsenic or Boron) to silicon.
晶體管由不同的半導體層構成,這些半導體是將某些雜質(如砷和硼)加到純硅中而制成。
First-principle Studies the Property of the Diluted Magnetic Semiconductors Doped with Ca、Ti、C and the Binuclear Manganese Molecular Magnet
鈣、鈦和碳摻雜的稀磁半導體及雙核錳分子磁體性質的研究
add impurities to (a semiconductor) in order to produce or modify its properties; in electronics.
給半導體加上雜質以便減少或改變它的道具；一般用在電子學中。
The activation analysis method for the determination of elemental impurities in semiconductor silicon materials
GB/T4298-1984半導體硅材料中雜質元素的活化分析方法